PART |
Description |
Maker |
FM22LD16-13 |
4Mbit F-RAM Memory
|
Cypress Semiconductor
|
LXO-AT2N40MHZB/M LXO-AT2N40MHZB/I LXO-AT2N40MHZA/M |
16Kb Serial I2C 3V F-RAM Memory (AEC-Q100 Grade 3) F-RAM Enhanced 8051 MCU with 64KB Flash & 2KB F-RAM 4Kbit Serial SPI 5V F-RAM Memory 64Kbit F-RAM Processor Companion with RTC 16Kbit Serial SPI 5V F-RAM Memory (AEC-Q100 Grade 3) Peripheral IC 外围芯片
|
Mitsubishi Electric, Corp. TE Connectivity, Ltd.
|
LH28F004SU LH28F400SUHE-NC80 LH28F400SU |
4Mbit(512Kbit x 8, 256 Kbit x 16) 5V Single Voltage Flash Memory 4M (512K x 8) flash memory 4Mbit(512Kbit x 8/ 256 Kbit x 16) 5V Single Voltage Flash Memory
|
SHARP[Sharp Electrionic Components]
|
UN1221 UN1222 UN1223 UN1224 |
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes Silicon NPN epitaxial planer transistor
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
W28F641TT80L W28F641TB80L W28F641B W28F641BB80L W2 |
64MBIT (4MBIT × 16) PAGE MODE DUAL WORK FLASH MEMORY
|
Winbond
|
ES29DL160F-70RTG ES29DL320F-70RTG ES29DL640F-70RTG |
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
优先(苏州)半导体有限公
|
ES35P40-75CC2R ES35P40-75CC2T ES35P40-75CC2Y ES35P |
4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
|
Excel Semiconductor Inc.
|
AM29F400BT-70EF |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Spansion, Inc.
|
M29F400T |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory(4Mb闪速存储器) 4Mb12KB的x8256Kb的x16插槽,引导块)单电源闪存4Mb的闪速存储器
|
意法半导 STMicroelectronics N.V.
|
M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|